Abstract:The effect of the GaAsP strain-compensating layer on type-II GaAs1−xSbx/InyGa1−yAs was investigated. GaAsSb/InGaAs multiple quantum wells (MQWs) without and with GaAsP strain-compensating layers were grown by molecular beam epitaxy. Increasing Sb or In compositions can extend photoluminescence (PL) emission at longer wavelength along with the highly induced compressive strain in the QWs. The power-dependent PL measured at low temperature reveals the type-II band characteristics of the GaAs1−xSbx/InyGa1−yAs system. A detailed analysis of the experimental data reveals that the GaAsP layers compensate the compressive strain of GaAsSb/InGaAs. The type-II QWs with GaAsP layers, (8 nm) GaAs0.84Sb0.16/(2.5 nm) In0.3Ga0.7As/(10 nm) GaAs0.85P0.15, emits PL at ∼1.1 μm, up to 210 K, while the PL of those strained sample without GaAsP vanishes at lower temperature. In view of the described sample, x-ray diffraction (XRD) analysis along with the simulation shows the validity of the procedure, resulting in nearly matched parameters of QW thicknesses and material compositions—(8.9 nm) GaAs0.835Sb0.165/(2.3 nm) In0.3Ga0.7As/(10.3 nm) GaAs0.85P0.15, with those of the designed QW. The thicknesses of QW from the TEM image, (8.6 nm) GaAsSb/(3.1 nm) InGaAs/(10.1 nm) GaAsP, agree well with the XRD results.

InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4

Solid Source Molecular Beam Epitaxy Growth of InAsP Using As2 and As4 Modes

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Inp and Ingaasp Materials Grown by Solid-Source Molecular Beam Epitaxy

Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

ENHANCING THE PHOTOLUMINESCENCE OF InAsP/InP STRAINED MULTIPLE QUANTUM WELLS BY H+ IONS IMPLANTATION

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Liquid Phase Epitaxy Growth and Photoluminescence of InAs1−x−ySbxPy Epilayer

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

Studies on Incorporation of As2 and As4 in III–V Compound Semiconductors with Two Group V Elements Grown by Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.