Abstract:A characterization procedure was developed to determine the alloy composition and strain state of Al(x)Ga(1-x)N/GaN(0 < x < 1) heterostructures deposited on c-plane sapphire substrates by low pressure organometalic vapor phase epitaxy. Motivated by a method suggested by Bowen and Tanner for separating the contributions of strain and composition in cubic crystals, we extended the technique to the case of hexagonal crystals by first principles derivation from elastic strain theory. The technique was evaluated using double-axis and triple-axis reciprocal space maps of 200 and 30 nm Al(x)Ga(1-x)N layers. The procedure did not require absolute lattice parameter measurements and relied instead on relative measurements of the layer and substrate peak positions. Symmetric and asymmetric reflections of the film and substrate were measured in the double-axis configuration with omega-2 theta scans. From the peak separation, the strained lattice parameters were determined. Assuming biaxial strain and linear variation of the relaxed lattice parameter with alloy composition, an equation was derived for composition in terms of the strained lattice parameters. The relaxation distribution in the AlGaN was found to be bimodal. Films with mole fraction of Al greater than 0.4 were completely relaxed and thoroughly cracked, while films with mole fraction of Al less than 0.4 exhibited compositionally dependent relaxation about the fully strained state. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457149]

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

Growth and Characterization of Algan/Gan Superlattices

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Improvements in A-Plane Gan Crystal Quality by Aln/Algan Superlattices Layers

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

X-ray Double Crystal Diffraction and Raman Spectra Measurements of AlP/GaP Short-Period Superlattices

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Determination of Al Composition in Strained AlGaN Layers

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Growth and characterization of AlInN/GaN superlattices

Lattice Dynamics of Gan/Aln Superlattices

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties