Abstract:Properties of unintentionally-doped GaN re-grown on molecular beam epitaxy grown AlN/Sapphire templates by metal organic vapor phase epitaxy (MOVPE) are studied in this article. X-ray diffraction (XRD), transmission electron microscope (TEM), and atomic force microscope are used to investigate the influence of the crystal quality and surface morphology of AlN on the GaN. It is found that when surface roughness of AlN is small, the GaN has a full width at half maximum (FWHM) values of XRD rocking curves (200—300 and 400—500 arcsec for (002) and (102) plane ω-scan, respectively) and surface roughness (0.1—0.2 nm), which are comparable to those grown on sapphire substrates by using "two-step" method, although the FWHMs of (102) plane XRD ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN.

TEM Analysis on GaN/AlGaN SLS

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Growth and Characterization of Algan/Gan Superlattices

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Gan Grown on Ain/Sapphire Templates

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Growth and characterization of AlInN/GaN superlattices

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy