Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Preparation of large area freestanding GaN by laser lift-off technology

TEM Analysis on GaN/AlGaN SLS

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips

Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire

Laser slicing: a thin film lift-off method for GaN-on-GaN technology

Study of the Laser Lift-off Technology of GaN Films from Sapphire Substrates

Study of GaN light-emitting diodes fabricated by laser lift-off technique

Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films

Cathodoluminescence Study of InGaN MQW Laser Diodes Using Laser Lift‐off Technique

Cleaved Laser Facets on Free‐standing InGaN LD Membrane Created by Laser Lift‐off and Structural Characterisation of the Membrane

Vertical Electrode Structure GaN Based Light Emitting Diodes

Remote Epitaxy and Exfoliation of GaN Via Graphene

Ultraviolet Lasing Using Individual GaN Nanobelts

Thin Film GaN-Based LEDs on Cu Substrates Fabricated by Laser Lift-Off

Exploration of TEM Sample Preparation for GaN Dislocations Based on in Situ FIB-SEM

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD