Preparation of large area freestanding GaN by laser lift-off technology

J. Xu,R. Zhang,Y.P. Wang,X.Q. Xiu,B. Shen,S.L. Gu,Y. Shi,Z.G. Liu,Y.D. Zheng

DOI: https://doi.org/10.1016/S0167-577X(02)00414-7

IF: 3

2002-01-01

Materials Letters

Abstract:Gallium nitride films grown on sapphire substrates were successfully separated by laser radiation. The absorption of the 248-nm radiation by the GaN at the interface results in rapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas. The substrate can be easily removed by heating above the Ga melting point of 29 °C. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements of GaN before and after lift-off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. Further discussions on the threshold energy and crack-free strategies of laser lift-off process have also been presented.