Abstract:Electron leakage currents seriously hinder GaN-based blue laser diodes (LDs) from high wall-plug efficiencies. Inserting an ultra-thin AlGaN electron blocking layer (EBL) in the epitaxy structure is a major technique to suppress the leakage currents for which a high Al composition in the EBL is necessary. Despite many studies on the optimization of the compositions of EBLs, it is questionable whether they reach the designed value in real growths by metal-organic vapor phase epitaxy. We investigate the influence of the growth conditions of upper cladding layers (CLs) on the underlying EBLs. A strong composition degradation of the EBL is observed when the growth rate of the CL is low, which drastically reduces the output performance of both LEDs and LDs. A 30-nm fast-growing protecting layer can efficiently prevent the EBL from such degradation. The phenomenon cannot be explained by a composition pulling effect nor an etch effect by hydrogen, but by a mutual solid solution between the EBL and the adjacent CL. The solution process is found thermally favored by calculating the Gibbs energy where strain and entropies are considered. It is inferred that the chemically active Ga adatoms at the surface play an important role in accelerating the solution process. Based on these considerations, we introduce a random walk model to clarify the kinetic influence of CL growth rates on EBL degradation semi-quantitatively. The results help to understand the subtle process in the growth of heterostructures and the transport process of GaN-based LDs.

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

TEM Analysis on GaN/AlGaN SLS

Cathodoluminescence Study of InGaN MQW Laser Diodes Using Laser Lift‐off Technique

Thermo-mechanical Solution of Film/substrate Systems under Local Thermal Load and Application to Laser Lift-off of GaN/sapphire Structures

Theoretical and Experimental Study of Laser Induced Damage on Gaas by Nanosecond Pulsed Irradiation

Microanalyses of the Reverse-Bias Leakage Current Increase in the Laser Lift off GaN-based Light Emitting Diodes

Laser-Induced Damage Threshold and Laser Processing of Gan

Laser-Induced Damage Threshold and Surface Processing of Gan at 400 Nm Wavelength

Shock-Assisted Superficial Hexagonal-To-Cubic Phase Transition in Gan/Sapphire Interface Induced by Using Ultra-Violet Laser Lift-Off Techniques

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Investigation on Damage Process of Gaas Induced by 1064 Nm Continuous Laser

Cleaved Laser Facets on Free‐standing InGaN LD Membrane Created by Laser Lift‐off and Structural Characterisation of the Membrane

Study of GaN light-emitting diodes fabricated by laser lift-off technique

Thin Film GaN-Based LEDs on Cu Substrates Fabricated by Laser Lift-Off

Periodic surface micro-nanostructures on GaN films induced by femtosecond laser irradiation

Study of the Laser Lift-off Technology of GaN Films from Sapphire Substrates

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire

Molecular dynamics study on mechanical cleavage mechanisms of GaAs and experimental verification