Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Laser-Induced Damage Threshold and Laser Processing of Gan

Laser-Induced Damage Threshold and Surface Processing of Gan at 400 Nm Wavelength

Theoretical and Experimental Study of Laser Induced Damage on Gaas by Nanosecond Pulsed Irradiation

Investigation on Damage Process of Gaas Induced by 1064 Nm Continuous Laser

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Shock-Induced Brittle Cracking in Hvpe-Gan Processed by Laser Lift-Off Techniques

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

Ablation of Gan Using A Femtosecond Laser

Influence of Postgrowth Processing Technology on the Laser Induced Damage Threshold of ZnGeP2 Single Crystal

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Laser-Induced Damage Threshold of Nonlinear GaSe and GaSe:In Crystals Upon Exposure to Pulsed Radiation at a Wavelength of 2.1 Μm

Property Manipulation Through Pulsed Laser Annealing in High Dose Mg-implanted GaN

Catastrophic Degradation of Ingan/Gan Blue Laser Diodes

Micro-structure changes induced by femtosecond laser on the surface of GaN multilayer film grown on Si substrate

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes

Degradation Study of InGaN-based Laser Diodes Grown on Si

Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold

Rapid Degradation of InGaN/GaN Green Laser Diodes

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.