Abstract:Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance. However, heteroepitaxial GaN growths like GaN on sapphire are not suitable for power devices due to the threading dislocation densities as high as 108/cm2. Recently, homoepitaxial GaN growth has become possible thanks to the native GaN substrates with dislocation densities in the order of 104/cm2 but the extremely high cost of the GaN substrates makes the homoepitaxy method unacceptable for industrial applications, and the slicing of wafers for reusing them is an effective solution for cost reduction. In this study, we will investigate a route for slicing the GaN single crystal substrate by controlling the laser pulse energy and changing the distance between each laser shot. The 2D and 3D crack propagations are observed by a multiphoton confocal microscope, and the cross section of samples is observed by a scanning electron microscope (SEM). The results showed that two types of radial and lateral cracking occurred depending on the pulse energy and shot pitch, and controlling them was of importance for attaining a smooth GaN substrate slicing. Cross-sectional SEM images showed that at suitable pulse energy and distance, crack propagation could be controlled with respect to the irradiation plane.

Laser-Induced Damage Threshold and Surface Processing of Gan at 400 Nm Wavelength

Laser-Induced Damage Threshold and Laser Processing of Gan

Ablation of Gan Using A Femtosecond Laser

Investigation on Damage Process of Gaas Induced by 1064 Nm Continuous Laser

Theoretical and Experimental Study of Laser Induced Damage on Gaas by Nanosecond Pulsed Irradiation

Periodic surface micro-nanostructures on GaN films induced by femtosecond laser irradiation

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

New surface plasmon polariton waveguide based on GaN nanowires

Property Manipulation Through Pulsed Laser Annealing in High Dose Mg-implanted GaN

Study of laser-debonded GaN light emitting diodes

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 μm

Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm

Carrier emission of n-type Gallium Nitride illuminated by femtosecond laser pulses

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

Ultrafast damage dynamics and ablation mechanism of GaSe induced by femtosecond laser irradiation

Laser applications in GaN growth and processing