Abstract:We report the high-powered laser modification of the chemical, physical, and structural properties of the two-dimensional (2D) van der Waals material GaSe. Our results show that contrary to expectations and previous reports, GaSe at the periphery of a high-power laser beam does not entirely decompose into Se and Ga2O3. In contrast, we find unexpectedly that the Raman signal from GaSe gets amplified around regions where if was not expected to exist. Atomic force microscopy (AFM), dielectric force microscopy (DFM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX) results show that laser irradiation induces the formation of nanoparticles. Our analyses demonstrate that, except for a fraction of Ga2Se3, these nanoparticles still belong to the GaSe phase but possess different electrical and optical properties. These changes are evidenced in the increased Raman intensity attributed to the near-resonance conditions with the Raman excitation laser. The elemental analysis of nanoparticles shows that the relative selenium content increased to as much as 70% from a 50:50 value in stoichiometric GaSe. This elemental change is related to the formation of the Ga2Se3 phase identified by Raman spectroscopy at some locations near the edge. Further, we exploit the localized high-power laser processing of GaSe to induce the formation of Ag-GaSe nanostructures by exposure to a solution of AgNO3. The selective reaction of AgNO3 with laser-irradiated GaSe gives rise to composite nanostructures that display photocatalytic activity originally absent in the pristine 2D material. The photocatalytic activity was investigated by the transformation of 4-nitrobenzenethiol to its amino and dimer forms detected in situ by Raman spectroscopy. This work improves the understanding of light-matter interaction in layered systems, offering an approach to the formation of laser-induced composites with added functionality.

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 μm

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm

Studies on Infrared Absorption Loss of Antireflection Coatings on Germanium and Potassium Chloride Substrates at the Wavelength of 10.6μm by Photothermal Deflection Technique

Fabrication of antireflection microstructure on GaSe crystal surface by single-pulse femtosecond laser ablation

Antireflection microstructures on ZnSe for mid- and far-IR fabricated by femtosecond laser ablation assisted with wet chemical etching

Laser-Induced Damage Threshold of Nonlinear GaSe and GaSe:In Crystals Upon Exposure to Pulsed Radiation at a Wavelength of 2.1 Μm

Ultrafast damage dynamics and ablation mechanism of GaSe induced by femtosecond laser irradiation

Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

Patterning GaSe by High-Powered Laser Beams.

Laser Induced Periodic Surface Structure Formation in Germanium above Laser Damage Fluence by Mid Ir Femtosecond Laser Irradiation

Enhancement of far-infrared laser damage threshold in Ge-As-Se glass fiber

Laser-Induced Damage Threshold and Surface Processing of Gan at 400 Nm Wavelength

Influence of Postgrowth Processing Technology on the Laser Induced Damage Threshold of ZnGeP2 Single Crystal

Laser Induced Periodic Surface Structure Formation in Germanium by Strong Field Mid IR Laser Solid Interaction at Oblique Incidence.

Optical properties of Ge-Sb-Se thin films induced by femtosecond laser

Picosecond Laser Microfabrication of Infrared Antireflective Functional Surface on As2Se3 Glass

Growth and optical properties of single AgGaGe5Se12 (AGGSe) crystal

Growth and Optical Properties of Big-sized GaSe Single Crystals

Investigation on Damage Process of Gaas Induced by 1064 Nm Continuous Laser

Influence of the Surface and Subsurface Contaminants on Laser-Induced Damage Threshold of Anti-Reflection Sub-Wavelength Structures Working at 1064 Nm

532 Nm CW Laser Induced Damage of GaAs Materials