Abstract:Mid-infrared (MIR) lasers based on nonlinear frequency conversion by nonlinear optical (NLO) crystals are urgently desired for various military and civilian applications. LiInSe2 (LISe) crystal has aroused intense attention due to its remarkable optical properties. However, the presence of point defects in LISe increases absorption loss and degrades the laser damage threshold (LDT), which limits the practical application in high-power MIR lasers. Therefore, it is essential to reveal the defect types and their formation mechanism in LISe, which is beneficial to design a rational strategy to improve the crystal quality. Here, large-sized LISe crystals with a diameter of 26 mm were successfully grown by the optimized Bridgman method using oriented seed crystal. Furthermore, three types of defects, VSe, VLi, and InLi in the as-grown LISe crystals were verified by photoluminescence (PL) spectra. Therefore, we designed the thermal annealing process under Li2Se vapor to compensate for the losses of Li and Se elements and reduce the defect concentration in LISe. Moreover, the evolution of defects in LISe crystals was determined by X-ray photoelectron spectroscopy (XPS), PL and ultrafast transient absorption spectra (TAS). All the experimental results confirm that the defect concentration in LISe greatly decreases and the crystal quality was obviously improved after annealing under Li2Se vapor. More importantly, this work provides a general strategy to reveal the defects in crystals and to improve the crystal quality of MIR chalcogenides for practical applications.

Fabrication of antireflection microstructure on GaSe crystal surface by single-pulse femtosecond laser ablation

Antireflection microstructures on ZnSe for mid- and far-IR fabricated by femtosecond laser ablation assisted with wet chemical etching

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 μm

Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Ultrafast damage dynamics and ablation mechanism of GaSe induced by femtosecond laser irradiation

Fabrication of mid-IR As-Se chalcogenide glass and fiber with low scattering loss

Rapid fabrication of antireflective structures on ZnS surface by spatial shaping femtosecond laser

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

Microcavity induced by few-layer GaSe crystal on silicon photonic crystal waveguide for efficient optical frequency conversion

Fabrication of an Anti-Reflective Microstructure on Sapphire by Femtosecond Laser Direct Writing.

Fabrication of single-mode hybrid crystal-glass waveguides by direct femtosecond laser writing and thermal annealing

Low-loss Ge-As-Se-Te Fiber for High-Intensity CO2 Laser Delivery

High-Efficiency Fabrication of Geometric Phase Elements by Femtosecond-Laser Direct Writing

Femtosecond laser inscription of nonlinear photonic circuits in Gallium Lanthanum Sulphide glass

Fabrication of High Refractive Index-Modulation Structures in Fused Silica by Femtosecond Laser Pulses

Crystal Growth, Characterization, and Thermal Annealing of Nonlinear Optical Crystals AgGaGenSe2(n+1) (n = 1.5, 1.75, 2, 3, 4, 5, and 9) for Mid-infrared Applications

Optimized Bridgman growth and quality improvement of LiInSe2 crystal by annealing in Li2Se vapor atmosphere

Preparation of especially pure Ge-Se glasses via germanium monoselenide for Mid-IR fiber optics

Optical limiting performance of Ga0.85In0.15Se and Ga0.90In0.10Se crystals in near infrared region