Abstract:Residual stress conditions in GaN-based LEDs will have a significant influence on device performance and reliability. In this paper, GaN-based vertical LEDs under different stress conditions are fabricated by bonding with three types of submounts (Al2O3 submount, CuW submount and Si submount), changing the soak temperature (290 degrees C, 320 degrees C, 350 degrees C and 380 degrees C) and using different laser energy densities (875, 945 and 1015 mJ.cm(2)). The warpage and Raman scattering spectra of those GaN-based LEDs are measured. The experimental results show that the residual stress conditions in GaN-based vertical LEDs are a consequence of the bonded submounts and bonded metal, and the soak temperature is the primary factor that determines the degree of residual stress in LED chips. In the laser lift-off process, changing laser energy density in an appropriate range has little influence on residual strain of LED chips, and the micro-cracks in GaN layer caused by LLO process will play a role in releasing the residual stress. The warpage of epitaxial sapphire substrate becomes large after boding with Si submount, the residual stress in GaN-based vertical LEDs is tensile stress and becomes larger with the soak temperature rising. When GaN epi wafer bonds with Al2O3 submount and CuW submount, the warpages becomes small and large respectively and the residual stress in chips is compressive stress. Because of the mismatch of coefficient of thermal expansion, the compressive stress in GaN-based LED chips increases for Al2O3 submount and drops for CuW submount with the soak temperature rising.

Thermo-mechanical Solution of Film/substrate Systems under Local Thermal Load and Application to Laser Lift-off of GaN/sapphire Structures

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment with an Optimized Surface Structure Design

Optimized Surface Structure by Laser Treatment for the Relaxation of Residual Stress in Bent Gan Film

Axisymmetric thermo-mechanical analysis of laser-driven non-contact transfer printing

Thermo-mechanical Modeling of Laser-Driven Non-Contact Transfer Printing: Two-Dimensional Analysis

Study Of The Structural Damage In The (0001) Gan Epilayer Processed By Laser Lift-Off Techniques

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

Study of the Laser Lift-off Technology of GaN Films from Sapphire Substrates

Stress waves in laser-material interaction: From atomistic understanding to nanoscale characterization

Fem Thermal and Stress Analysis of Bonded Gan-On-Diamond Substrate

A generalized thermoelastic Stefan problem with spatio-temporal nonlocal effect in picosecond pulse laser material processing

Critical Thickness of GaN Film in Controllable Stress-Induced Self-Separation for Preparing Native GaN Substrates

Modeling Of Non-Equilibrium Deformation In A Double-Layered Thin Film During Ultrashort Laser Heating

Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips