Abstract:The accurate predicting of thermal conductivity of GaN semiconductors, especially GaN films, is of great importance for the thermal management in electronic devices. In this paper, a theoretical model based on the first-principles calculations and Debye-Callaway model is proposed to predict the thermal conductivity of GaN films, which is a function of temperature, isotope, point defects, dislocations, film thickness, and strain fields. Specifically, the coefficients in our theoretical model that used to capture umklapp scattering and phonon-isotope scattering are fitted with the data from first-principles calculations, and two sub-models for point defects scattering and dislocation scattering are discussed, respectively. The sub-model of boundary scattering with suppression function is introduced to describe the anisotropy of size effect, and the effect of in-plane strain (perpendicular to polar axis) is also discussed. The comparison between theoretical predictions and experimental data shows that the model performs well roughly in a large temperature range from 300 to 500 K, with an around 20% difference at room temperature. Our predicted temperature dependent thermal conductivity deviates slightly from the measurements, which may result from the lack of high-order phonon scattering in our model, e.g., four-phonon scattering. Our results also show that the first-principles calculations for GaN overestimates the influence of isotope scattering. We further study the thermal transport properties of GaN film which are influenced by the thickness, dislocation density, and point defect density through using the new theoretical model. Significant reduction of thermal conductivity is found to occur at a film thickness of 10 mu m, which is consistent with the findings from the first-principles calculations. The isotope and defects including point defects and dislocations are found to have a weak influence on the thermal conductivity when the thickness of GaN film is larger than 100 nm, while the influence becomes significant for the film with and below 100 nm in thickness. In addition, dislocations and point defects start to reduce thermal conductivity significantly when the surface density of dislocations increases to 10(10) cm(-2) and point defect density reaches 10(18) cm(-3).

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Thick GaN film stress-induced self-separation

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Thermo-mechanical Solution of Film/substrate Systems under Local Thermal Load and Application to Laser Lift-off of GaN/sapphire Structures

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Thermal Conductivity Modeling of GaN Films