Abstract:The excellent physical and chemical properties of two-dimensional (2D) materials provide the possibility to promote the further development of 3D III-nitride semiconductors. Growing GaN films on 2D materials like hexagonal boron nitride (h-BN) can reduce the defects and stress caused by lattice mismatch and thermal mismatch and improve the crystal quality of GaN. Here, the growth mechanism of exfoliable GaN films grown on processed wrinkled h-BN/sapphire substrates by van der Waals epitaxy is reported. The processed wrinkled h-BN is obtained from natural wrinkled h-BN through O2 plasma treatment. The O2 plasma creates new atomic steps in the wrinkles and also additional defects in the flat areas. Metal-organic chemical vapor deposition was used to grow GaN, and it was found that GaN preferentially nucleated along the processed wrinkles. The physical mechanism of preferential nucleation of GaN along h-BN wrinkles was investigated with first-principles calculations, which reveals that compared with flat areas, the wrinkles showed greater N atom adsorption energy (-5.55 eV). The complete growth process of GaN nucleation along the wrinkles, followed by lateral growth of islands and finally merging to form a flat single-crystal GaN film, was fully demonstrated. The obtained GaN film has a typical atomic-step terrace, a dislocation density of 7.23 x 108 cm-2, and a low compressive stress of 0.095 GPa. Due to the weak van der Waals force between the h-BN layers, the obtained GaN film can be easily released. Our work provides a new strategy for the growth of high-quality exfoliable GaN films on 2D materials, laying the foundation for the preparation of transferable GaN flexible devices.

Thick GaN film stress-induced self-separation

Critical Thickness of GaN Film in Controllable Stress-Induced Self-Separation for Preparing Native GaN Substrates

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

Study on the Stress and Mechanism of Self-Separated GaN Grown by Na-flux Method

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE