Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Study of Stress in Ammonothermal Non-Polar and Semi-Polar GaN Crystal Grown on HVPE GaN Seeds

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate

Thick GaN film stress-induced self-separation

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Effect of Residual Stress on the Microstructure of GaN Epitaxial Films Grown by Pulsed Laser Deposition

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy