Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Structural and optical properties of Al x Ga 1 − x N/Al y Ga 1 − y N multiple quantum wells for deep ultraviolet emission

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Epitaxial Evolution on Buried Cracks in A Strain-Controlled Aln/Gan Superlattice Interlayer Between Algan/Gan Multiple Quantum Wells and A Gan Template

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

High Internal Quantum Efficiency in AlGaN Multiple Quantum Wells Grown on Bulk AlN Substrates

Intersubband Transitions at Atmospheric Window in Alxga1-Xn/Gan Multiple Quantum Wells Grown on Gan/Sapphire Templates Adopting Aln/Gan Superlattices Interlayer

Structural And Optical Properties Of Alxga1-N-X/Alyga(1-Y)N Multiple Quantum Wells For Deep Ultraviolet Emission

Annealing of GaN-InGaN Multi Quantum Wells: Correlation between the Bandgap and Yellow Photoluminescence

A Study Of Photoluminesence And Structure Character On Aigaas/Gaas Quantum Well Laser Material

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission