Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Microstructural and Optical Properties of Stress-Free GaN Films on Graphene Prepared by PECVD

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Effect of Residual Stress on the Microstructure of GaN Epitaxial Films Grown by Pulsed Laser Deposition

Raman Investigation on the Surface Carrier Concentration of Single GaN Microrod Grown by MOCVD

Realization of Wafer-Scale Single-Crystalline GaN Film on CMOS-compatible Si(100) Substrate by Ion-Cutting Technique

Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films

Growth Mechanism of Exfoliable GaN by Van Der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes