Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

Laser Liftoff of GaAs Thin Films

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

Laser slicing: a thin film lift-off method for GaN-on-GaN technology

Pulsed Laser Deposition of Epitaxial SrTiO3/Sr3Al2O6 Templates as a Water-Soluble Sacrificial Layer for GaAs Growth and Lift-Off

Study of the Laser Lift-off Technology of GaN Films from Sapphire Substrates

Selective etching of (111)B-oriented $Al_x Ga_{1-x} As$-layers for epitaxial lift-off

Low-temperature (250 °C) Selective Epitaxy of GaAs Films and P-N Junction by Laser-Assisted Metalorganic Chemical Vapor Deposition

Preparation of large area freestanding GaN by laser lift-off technology

Laser-Driven Micro Transfer Placement of Prefabricated Microstructures

Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Fast Growth of Gan Epilayers Via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications

Adsorption-controlled epitaxy of perovskites

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers