Abstract:Abstract The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μ m × 80 μ m onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 10 5 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.

Transfer Printing of Fully Formed Thin‐film Microscale GaAs Lasers on Silicon with a Thermally Conductive Interface Material

Transfer Printing of Thin-Film Microscale Gaas Lasers on Silicon

1.9 μm hybrid silicon/iii-v semiconductor laser

Laser-Driven Micro Transfer Placement of Prefabricated Microstructures

Micro-transfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications

Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Metamorphic III–V Semiconductor Lasers Grown on Silicon

Novel integration technique for silicon/III-V hybrid laser

Monolithic integration of embedded III-V lasers on SOI

In‐Plane 1.5 Μm Distributed Feedback Lasers Selectively Grown on (001) SOI

Tunable Quantum Dot Lasers Grown Directly on Silicon

Noncontact selective laser transfer printing and assembly of micro-sized semiconductor devices

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Recent Advances of Heterogeneously Integrated III-V Laser on Si

Design and Analysis of 2-Μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer

Thermal Characterization of Electrically Injected GaN-based Microdisk Lasers on Si

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Deep-etched III-V Lasers Grown Directly on Silicon Substrates