Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Tunable Quantum Dot Lasers Grown Directly on Silicon

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Photonic integrated circuits fabricated using quantum well intermixing

Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Simultaneous synthesis and integration of nanoscale silicon by three-photon laser direct writing

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Monolithic Quantum Dot Discrete Mode Laser on SOI

Monolithic integration of embedded III-V lasers on SOI

Configurable Integration of On‐Chip Quantum Dot Lasers and Subwavelength Plasmonic Waveguides

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line