Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Tunable Quantum Dot Lasers Grown Directly on Silicon

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

Monolithic Quantum Dot Discrete Mode Laser on SOI

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Direct Modulation and Free-Space Transmissions of up to 6 Gbps Multilevel Signals With a 4.65-m Quantum Cascade Laser at Room Temperature

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: High Speed Evanescent Quantum‐Dot Lasers on Si (laser Photonics Rev. 15(8)/2021)

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

High Speed Evanescent Quantum‐Dot Lasers on Si

Turnkey locking of quantum-dot lasers directly grown on Si

Quantum dot multi-wavelength lasers for Tbit/s coherent communications and 5G wireless networks -INVITED

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

8-λ × 50 Gbps/λ Heterogeneously Integrated Si-Ph DWDM Transmitter

Quantum dash multi-wavelength lasers for Tbit/s coherent communications and 5G wireless networks

Wafer-Scale Demonstration of Low-Loss (~0.43 dB/cm), High-Bandwidth (> 38 GHz), Silicon Photonics Platform Operating at the C-Band

A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings