Abstract:Recent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particularly attractive due to their on-demand generation of high-purity single photons. Different photonic platforms are used to manipulate the states of the photons. Nevertheless, no single platform satisfies all the requirements of quantum photonics, as each platform has its merits and shortcomings. For example, the thin-film silicon nitride (SiN) platform provides ultra-low loss on the order of 0.1 dB/m, but is incompatible with dense integration, requiring large bending radii. On the other hand, silicon on insulator offers a high refractive index contrast for dense integration but has a high absorption coefficient at the emission wavelengths (800-970 nm) of state-of-the-art QDs. Amorphous silicon carbide (a-SiC) has emerged as an alternative with a high refractive index (higher than SiN), an extended transparency window compared to Silicon, and a thermo-optic coefficient three times higher than that of SiN, which is crucial for tuning photonic devices on a chip. With the vision of realizing a quantum photonic integrated circuit, we explore the hybrid integration of SiN/a-SiC photonic platform with quantum dots and superconducting nanowire single-photon detectors. We validate our hybrid platform using a brief literature study, proof-of-principle experiments, and complementary simulations. As a proof-of-principle, we show a quantum dot embedded in nanowires (for deterministic micro-transfer and better integration) that emits single photons at 885 nm with a purity of 0.011 and a lifetime of 0.98 ns. Furthermore, we design and simulate an adiabatic coupler between two photonic platforms, a-SiC and SiN, by aiming to use the benefits of both platforms, i.e. dense integration and low losses, respectively. Our design couples the light from SiN waveguide to a-SiC waveguide with 96% efficiency at 885 nm wavelength. Our hybrid platform can be used to demonstrate on-chip quantum experiments such as Hong-Ou-Mandel, where we can design a large optical delay line in SiN and an interference circuit in a-SiC.

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics

High Purcell Factor Generation of Indistinguishable On-Chip Single Photons

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

Transfer-printed single photon sources coupled to wire waveguides

Silicon Photonic Devices for Scalable Quantum Information Applications

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Tunable Quantum Dot Lasers Grown Directly on Silicon

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Quantum photonics hybrid integration platform

A silicon photonic add-drop filter for quantum emitters

Silicon Quantum Photonic Sources and Circuits

Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics

Scalable Feedback Stabilization of Quantum Light Sources on a CMOS Chip

Generation of Multiphoton Quantum States on Silicon