Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Quantum photonics hybrid integration platform

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

InAs/InP quantum dot based C-Band all-fiber plug-and-play triggered single-photon source integrated using micro-transfer printing

Silicon Photonic Devices for Scalable Quantum Information Applications

Photonic integrated circuits fabricated using quantum well intermixing

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Transfer-printed single photon sources coupled to wire waveguides

Tunable Quantum Dot Lasers Grown Directly on Silicon

Photonic-integrated circuits and components using quantum well intermixing

Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon

A fiber-integrated single photon source emitting at telecom wavelengths

Telecom wavelength quantum dots interfaced with silicon-nitride circuits via photonic wire bonding

A silicon photonic add-drop filter for quantum emitters