Abstract:A single frequency admittance spectroscopy technique is introduced for determining the band discontinuity on Si/GexSi1-x/Si single quantum well (SQW). By using this method, the more accurate experimental results can be obtaind from a single frequency admittance spectrum. For an alloy with composition x=0.33，we get the activation energy Ea＝0.20eV. In order to obtain the value of the band offset，it is necessary to determine the position of Fermi level which depends on the dopam concentration inside and outside the well, the band offset of hetero-interface and temperature. By solving Poisson equation, we get the energy band diagram and Fermi level of the test sample. It is shown that the Fermi level lies about 40 meV above the top of valance band in the well. And due iv the carrier transfer at the hetero-interface, the carrier concentration (about ２×１０17ｃｍ－３) in the well is one order large than dopant concentration(1×１０16ｃｍ－３). The energy bands at two sides of the interfaces are bent by about 0.006 eV in the well and O.11eV in the barrier, hence the valance band offset can be calculated as 0.16eV. The accuracy of this technique can also be verified from reconstruction of C-T and G-T curves by cumputer simulation.

INTERSUBBAND ABSORPTION IN P-Type GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Infrared Absorption in SiGe/Si Multiple Quantum Wells

Photoabsorption and photoresponse behaviors of Si1−xGex/Si quantum wells

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY

Theoretical and experimental study on infrared intersubband transitions of quantum wells

Calculation of Linear and Nonlinear Intersubband Optical Absorptions in Electric-Field-Biased Semiparabolic Quantum Wells

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Electroreflectance Study Of Strained-Layer Gexsi1-X/Si Multiple-Quantum Wells

Photocurrent Absorption Spectroscopic Study of Si0.6ge0.4/Si Quantum Wells

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

Infrared Absorption at Normal Incidence and Resonant Dispersion Effect in the Sige/Si Multiple Quantum Well

Intersubband Transition in GaN/InGaN Multiple Quantum Wells