Abstract:The quantum spin Hall effect has been predicted theoretically and observed experimentally in InAs/GaSb quantum wells as a result of inverted band structures, for which electron bands in InAs layers are below heavy hole bands in GaSb layers in energy. The hybridization between electron bands and heavy hole bands leads to a hybridization gap away from k=0. A recent puzzling observation in experiments is that when the system is tuned to more inverted regime by a gate voltage (a larger inverted gap at k=0), the hybridization gap decreases. Motivated by this experiment, we explore the dependence of hybridization gap as a function of external electric fields based on the eight-band Kane model. We identify two regimes when varying electric fields: (1) both inverted and hybridization gaps increase and (2) inverted gap increases while hybridization gap decreases. Based on the effective model, we find that light-hole bands in GaSb layers play an important role in determining hybridization gap. In addition, a large external electric field can induce a strong Rashba splitting and also influence hybridization gap.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the experimental phenomenon that in the InAs/GaSb quantum well system, when the system is tuned to a more inverted regime (i.e., a larger inverted bandgap \(E_g\)) by the gate voltage, the hybridization gap (also known as mini - gap \(\Delta\)) decreases. Specifically, the researchers hope to explore the influence of the external electric field on the inverted bandgap and the hybridization gap, and explain why as the electron density \(n_0\) decreases, the hybridization gap \(\Delta\) increases, and when the electron density further decreases, the hybridization gap decreases again.
### Summary of main problems:
1. **Relationship between inverted bandgap and hybridization gap**: In the experiment, it was observed that when the system was tuned to a more inverted regime by the gate voltage, although the inverted bandgap \(E_g\) increased, the hybridization gap \(\Delta\) decreased.
2. **Contradiction in the four - band model**: According to a simple analysis of the four - band model, the hybridization gap \(\Delta\) should be proportional to the electron density \(n_0\), but this contradicts the experimental results.
3. **Application of the eight - band Kane model**: In order to better understand this phenomenon, the researchers used the more complex eight - band Kane model for numerical calculations to study the influence of the external electric field on the bandgap.
### Research methods:
- **Theoretical model**: Use the eight - band Kane model to describe the electronic band structure of the InAs/GaSb quantum well system and introduce an external electric field term \(V_{\text{ext}}\).
- **Numerical calculation**: Solve the eigenvalue problem of the Hamiltonian \(H_{\text{full}}\) including the external electric field to obtain the band structure and bandgap changes under different electric field intensities.
- **Parameter analysis**: Derive the parameters \(A\) and \(\xi_e\) of the four - band model from the eight - band Kane model through perturbation theory, and analyze the changes of these parameters with the external electric field.
### Key findings:
- **Behavior of inverted bandgap \(E_g\) and hybridization gap \(\Delta\)**: As the external electric field \(U\) increases, the inverted bandgap \(E_g\) increases monotonically, while the hybridization gap \(\Delta\) first increases and then decreases.
- **Influence of light - hole states**: Under a forward electric field, the light - hole state \(|LH_1\rangle\) approaches the bandgap and strongly mixes with the electron state \(|E_0\rangle\), causing the hybridization gap \(\Delta\) to decrease.
- **Influence of Rashba splitting**: A larger external electric field induces strong Rashba splitting, which affects the change of the hybridization gap \(\Delta\).
Through these studies, the paper provides a possible explanation for why the phenomenon of an increasing inverted bandgap and a decreasing hybridization gap was observed in the experiment.