Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Chemical composition fluctuations at interfaces in quantum well structures: effect on interface phonon modes

Optical Interface Phonon in Graded Quantum Well Structures

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Dispersion of Interface Optical Phonons and Their Coupling with Electrons in Asymmetrical Wurtzite Gan/Ga1-Xalxn Quantum Wells

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

POLAR VIBRATION SPECTRA OF INTERFACE AND SURFACE OPTICAL PHONONS AND THEIR FRÖHLICH ELECTRON-PHONON INTERACTIONS IN FREESTANDING SYMMETRICAL AND ASYMMETRICAL WURTZITE<font>GaN/Ga</font><sub>1-x</sub><font>Al</font><sub>x</sub><font>N</font>MULTI-LAYER HETEROSTRUCTURES

Atomically localized ingredient-dependent interface phonon in heterogeneous solids

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

Propagating Optical-Phonon Modes and Their Electron-Phonon Interactions in Wurtzite Gan/Alxga1-Xn Quantum Wells

Full Optical Phonon States and Their Dispersive Spectra of a Wurtzite GaN/AlGaN Superlattice: Quantum Size Effect

Optical-phonon Modes and Electron-Optical-phonon Interaction in a Coupled Quantum Well

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Polar Vibration Spectra Of Interface And Surface Optical Phonons And Their Frohlich Electron-Phonon Iinteractions In Freestanding Symmetrical And Asymmetrical Wurtzite Gan/Ga1-Xalxn Multi-Layer Hetero Structures

Polar Oscillation and Dispersion Properties of Quasi-Confined Optical Phonon Modes in a Wurtzite GaN/AlxGa1−xN Nanowire

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Impact of interfacial compositional diffusion on interfacial phonon scattering and transmission in GaN/AlN heterostructure