Abstract:A microscopic theory for the generation and propagation of coherent LA phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump laser and is treated theoretically using the density matrix formalism. We use realistic wurzite bandstructures taking valence-band mixing and strain-induced piezo- electric fields into account. In addition, the many-body Coulomb ineraction is treated in the screened time-dependent Hartree-Fock approximation. We find that under typical experimental conditions, our microscopic theory can be simplified and mapped onto a loaded string problem which can be easily solved.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to solve the microscopic theoretical problems of generating coherent acoustic phonons (LAP) by exciting electron - hole pairs with ultrafast lasers in InGaN/GaN multi - quantum - well (MQW) structures. Specifically, the author hopes to establish a theoretical model that can explain and predict these phenomena through the following aspects of research: 1. **Generation mechanism**: Explore how to drive the generation of coherent acoustic phonons by exciting electron - hole pairs with ultrafast Gaussian pump lasers. 2. **Propagation characteristics**: Study the propagation behavior of these coherent acoustic phonons in the wurtzite structure of pseudomorphic strain. 3. **Simplified model**: Map the complex microscopic theory onto a simple "loaded string" model for convenient analytical solution. ### Background and motivation In a uniform bulk material, since the laser wavelength is much larger than the lattice spacing, photogenerated carriers are usually excited in a macroscopic state, resulting in only Fourier components with \( q \approx 0 \). Therefore, in this case, only the coherent optical phonon mode can be excited, and the coherent acoustic phonon with non - zero frequency cannot be excited. However, in semiconductor superlattices, even if the laser wavelength is much larger than the lattice spacing, the pump laser can preferentially generate electron - hole pairs in the quantum wells, thereby forming a photogenerated carrier distribution with superlattice periodicity. This enables photogenerated carriers to couple not only to the optical phonon mode but also to generate a coherent acoustic phonon mode with non - zero frequency and wave vector \( q \approx \frac{2\pi}{L} \), where \( L \) is the superlattice period. Recent research has shown that under the action of the strain - induced piezoelectric field, large - amplitude coherent acoustic phonon oscillations have been observed in InGaN/GaN multi - quantum - well samples. These oscillations are strong enough to be observed in transmission rather than reflection, and the oscillation frequency is in the terahertz range, corresponding to the LA phonon frequency of \( q \approx \frac{2\pi}{L} \) and varies with the superlattice period of different samples. ### Research objectives The objective of this paper is to provide a microscopic model for the generation of coherent acoustic phonons by ultrafast laser - excited real carriers in wurtzite superlattices induced by strain. Through this model, the author hopes to prove that under appropriate conditions, the generation of coherent LA phonons can be mapped onto a simple uniform string model with a non - homogeneous forcing term and provide a microscopic expression for simplifying the string model. ### Main contributions 1. **Microscopic theory derivation**: Derive in detail the microscopic theory including band structure, strain, piezoelectric field, Coulomb interaction, and laser photo - excitation effects. 2. **Simplified model**: Simplify the complex microscopic theory into an easily solvable "loaded string" model and provide the corresponding microscopic expression. 3. **Physical insight**: Through the simplified model, provide additional understanding of the physical mechanism of coherent LA phonons. Through these studies, the author hopes to provide a solid theoretical basis for understanding and predicting the behavior of coherent acoustic phonons in InGaN/GaN multi - quantum - well structures.

Theory of coherent acoustic phonons in InGaN/GaN multi-quantum wells

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