Abstract:A number of physical processes involving quantum dots depend critically upon the "evanescent" electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Electron energy spectrum of the spherical GaAs/Al$_x$Ga$_{1-x}$As quantum dot with several impurities on the surface

Polaronic Effect on the Binding Energy of an Impurity with Varying Position in Parabolic Quantum Dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

Effect of the Dielectric-Constant Mismatch and Magnetic Field on the Binding Energy of Hydrogenic Impurities in a Spherical Quantum Dot

Binding energy, electronic states, and optical absorption in a staircase-like spherical quantum dot with hydrogenic impurity

Lande g factors and orbital momentum quenching in semiconductor quantum dots

Donors Confined by Spherical Quantum Dots and Located Anywhere

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

Impurity photoionization cross-section and intersubband optical absorption coefficient in multilayer spherical quantum dots

Impurity states in a quantum dot with the shape of spherical cap

SPECTRAL STRUCTURES OF SHALLOW DONORS IN QUANTUM DOTS

Electric field effect on the photoionization cross section of a single dopant in a strained A l A s / G a A s spherical core/shell quantum dot

Shallow-donor impurity effects on the far infrared electron–electron optical absorption coefficient in single and core/shell spherical quantum dots with Konwent-like confinement potential

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

By using the hydrogenic spectral structures of shallow donors in quantum dots

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Optical and X-ray Photo-emission Spectroscopies of Core/Shell Colloidal CdSe/CdS Quantum Dots: Modeling and Experimental Determination of Band Alignment