Abstract:The model of a spherical quantum dot with several donor impurities on its surface is suggested. The electron energy spectra are studied as a function of the quantum dot radius and the number of impurities. Several cases of the location of impurities on the quantum dot surface are considered. The plane wave functions method has been applied to calculate the electron energy spectrum. The splitting of electron energy levels is analyzed in the cases of different number of impurities. It is shown that the electron energy splitting depends on both the number of impurities on the surface and on their location. The electron binding energy is defined too.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the changes in the electron energy spectrum when there are multiple impurities on the surface of spherical quantum dots (QDs). Specifically, the author aims to: 1. **Determine the electron energy in quantum dots with surface impurities**: By introducing multiple impurities located on the surface of quantum dots, study the influence of these impurities on the electron energy inside the quantum dots. 2. **Establish the influence of the number of impurities on the electron energy spectrum**: Analyze how different numbers of surface impurities affect the energy levels and splitting of electrons. 3. **Calculate the electron binding energy in quantum dots with surface impurities**: Explore how the presence of impurities changes the binding energy between electrons and quantum dots. ### Research Background In recent years, the development of nanotechnology has made it possible to manufacture zero - dimensional semiconductor structures such as quantum dots (QDs). These quantum systems are widely used in fields such as solar cells, photodetectors, single - quantum - dot transistors, lasers, and light - emitting diodes. However, during the manufacturing process, quantum dots may be contaminated by impurities, which may affect their performance. Therefore, it is crucial to understand the influence of impurities on the electron behavior inside quantum dots. ### Research Methods The author used the plane - wave function method to calculate the electron energy spectrum in spherical GaAs/AlₓGa₁₋ₓAs quantum dots with multiple surface impurities. By considering different numbers and positions of impurities (for example, 1, 2, 4, and 6), the changes in the electron energy spectrum were studied, and the influence of the number and position of impurities on the electron energy splitting was analyzed. ### Main Findings - For 1 or 2 symmetrically distributed impurities, the electron energy spectrum shows obvious splitting phenomena, which is caused by symmetry breaking. - When the number of impurities increases to 4 or 6, the s - state and p - state no longer split, while the d - state splits into different energy levels according to the symmetry distribution of impurities. - As the number of surface impurities increases, the electron binding energy also increases, because the additional Coulomb potential energy leads to a stronger binding effect. ### Conclusion The author revealed through this study the significant influence of the number and position of surface impurities on the electron energy spectrum in quantum dots. These results not only help to understand the influence of impurities on the physical properties of quantum dots but also provide a theoretical basis for the future design and optimization of quantum - dot - based devices.

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