Abstract:We present a novel "linear combination of atomic orbitals"-type of approximation, enabling accurate electronic structure calculations for systems of up to 20 or more electronically coupled quantum dots. Using realistic single quantum dot wavefunctions as basis to expand the eigenstates of the heterostructure, our method shows excellent agreement with full 8-band $\boldsymbol{k}\cdot\boldsymbol{p}$ calculations, exemplarily chosen for our benchmarking comparison, with an orders of magnitude reduction in computational time. We show that, in order to correctly predict the electronic properties of such stacks of coupled quantum dots, it is necessary to consider the strain distribution in the whole heterostructure. Edge effects determine the electronic structure for stacks of $\lesssim$ 10 QDs, after which a homogeneous confinement region develops in the center. The overarching goal of our investigations is to design a stack of vertically coupled quantum dots with an intra-band staircase potential suitable as active material for a quantum-dot-based quantum cascade laser. Following a parameter study in the In$_{x}$Ga$_{1-x}$As/GaAs material system, varying quantum dot size, material composition and inter-dot coupling strength, we show that an intra-band staircase potential of identical transitions can in principle be realized. A species library we generated for over 800 unique quantum dots provides easy access to the basis functions required for different realizations of heterostructures. In the associated manuscript entitled "Room Temperature Lasing of Terahertz Quantum Cascade Lasers Based on a Quantum Dot Superlattice", we investigate room temperature lasing of a terahertz quantum cascade laser based on a two-quantum-dot unit cell superlattice.

By using the hydrogenic spectral structures of shallow donors in quantum dots

SPECTRAL STRUCTURES OF SHALLOW DONORS IN QUANTUM DOTS

Donors Confined by Spherical Quantum Dots and Located Anywhere

Infrared Magneto-Optical Absorption Of Shallow Donors In Gaas/Gaasal Quantum Dots

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Shallow Donors in a Harmonic Quantum Dot in High Magnetic Fields

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Quantum Levels and Zeeman Splitting for Two-Dimensional Hydrogenic Donor States in a Magnetic Field.

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Resonant shallow donor magnetopolaron effect in a GaAs/AlGaAs quantum dot in high magnetic fields

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Electric-field effects on shallow donor impurities in a harmonic quantum dot

Shallow-donor impurity effects on the far infrared electron–electron optical absorption coefficient in single and core/shell spherical quantum dots with Konwent-like confinement potential

Exciton states in strained GaN/AlxGa1-xN quantum dots

Electric field effect on the photoionization cross section of a single dopant in a strained A l A s / G a A s spherical core/shell quantum dot

Quantum-confinement-effect-driven Type-I–type-ii Transition in Inhomogeneous Quantum Dot Structures

Dimensionality and Potential-Shape Effects Ond0andd−

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

Efficient electronic structure calculations for extended systems of coupled quantum dots using a linear combination of quantum dot orbitals method

Electronic Structure of Quantum Dots in (111) Direction

Binding energy, electronic states, and optical absorption in a staircase-like spherical quantum dot with hydrogenic impurity