Donor/Acceptor Doping And Electrical Tailoring In Zno Quantum Dots

Zhizhen Ye,Yujia Zeng,Yangfan Lü,S. S. Lin,Luwei Sun,Liping Zhu,Binghui Zhao
DOI: https://doi.org/10.1063/1.2784198
IF: 4
2007-01-01
Applied Physics Letters
Abstract:The authors report on donor/acceptor doping in ZnO quantum dots (QDs) grown by a metal-organic chemical vapor deposition method. The Ga donor and N acceptor, as identified by x-ray photoelectron spectroscopy (XPS), are introduced into ZnO QDs. They demonstrate, with a combination of valence band XPS and scanning tunneling microscopy, that the electrical properties as well as Fermi level of the ZnO QDs can be well tuned by the donor/acceptor doping. In addition, photoluminescence from the ZnO QDs with quantum confinement effect is observed.
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