Abstract:Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound exciton (ABX) emission at 3.360 eV. The other two samples, pristine and ion irradiated (without annealing), however, do not show acceptor related PL emission in the nearby energy region. Electron transition from shallow donor (most probable site is interstitial zinc for undoped ZnO) to such newly formed shallow acceptor state creates new donor-acceptor pair (DAP) luminescence peak ~ 3.229 eV. ABX and DAP peak energy positions confirm that the acceptor is N related. The acceptor exciton binding energy has been estimated to be 180 +/- 15 meV which is in conformity with earlier reports. The activation of shallow acceptors without any source of atomic nitrogen can only be possible through diffusion of molecular nitrogen inside the sample during annealing. The N2 molecules get trapped at bulk defect sites incorporated by ion irradiation and subsequent annealing. X-ray diffraction (XRD) and Raman spectroscopic (RS) investigation have been employed to probe the changing defective nature of the ZnO samples. Irradiation induced increased disorder has been detected (both by XRD and RS) which is partially removed/modified by annealing at 300 oC. Simultaneous activation of molecular nitrogen acceptor in purposefully defective ZnO is the key finding of this work. Results presented here provide a simple but controlled way of producing shallow acceptor state in ZnO. If optimized through suitable choice of ion, its energy and fluence as well as the annealing temperature, this methodology can trigger further scope to fabricate devices using ZnO epitaxial thin films or nanowires.

Optical Fingerprints of Donors and Acceptors in High-Quality Nh3-Doped Zno Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Thermal Evolution of Zinc Interstitial Related Donors in High-Quality NH_3-doped ZnO Films

Annealing-Induced Change of Hydrogen Behavior in Zno Nanorods Revealed by Photoluminescence

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

Shallow acceptor state in ZnO realized by simple irradiation and annealing route

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Correlation between defect-related photoluminescence emission and anomalous Raman peaks in N-Al co-doped ZnO thin films

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Donor/Acceptor Doping And Electrical Tailoring In Zno Quantum Dots

Optical Properties of Na-Doped Zno Nanorods Grown by Metalorganic Chemical Vapor Deposition

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Defect-Related Vibrational and Photoluminescence Spectroscopy of A Codoped Zno : Al : N Film

Temperature-Dependent Photoluminescence and Photoluminescence Excitation of Aluminum Monodoped and Aluminum-Indium Dual-Doped Zno Nanorods

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films