Abstract:This study thoroughly examines the collective influence of compositional variation and annealing temperature on the electronic structure of sol-gel derived NixZn1-xO (x = 0 to 1) thin films annealed at different temperatures (700°C, 800°C, and 900°C) using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy. A gradual structural phase transition from hexagonal wurtzite ZnO to cubic rocksalt NiO with increasing Ni concentration was revealed by X-ray diffraction (XRD). Grain growth was observed from scanning electron microscopy with increasing annealing temperature. Photoluminescence measurements indicate the presence of defects like interstitial oxygen with Ni atoms incorporation. The Ni L3,2 absorption edge shows an intensity enhancement in the white-line feature with increasing Ni concentration, evidencing the presence of higher oxidation states. Concurring results were observed by XPS where both Ni2+ and Ni3+ free ion multiplets are present in Ni 2p core level spectrum for 20% and higher Ni concentration. O K and Zn L3,2 XAS spectra demonstrated the eg-t2g sub-band splitting at higher Ni concentration, triggered by band anticrossing interaction and crystal field splitting. The extended X-ray absorption fine structure (EXAFS) simulation for the Zn K edge revealed a Zn-Zn/Ni bond length change for 60% Ni concentration. The thermal disorder factor increased up to 40% Ni concentration, and beyond that, it decreased due to stable NiO phase dominance in the alloy composite. Ni K edge EXAFS fitting indicated an insignificant change in the Ni-O and Ni-Ni/Zn bond lengths throughout the range of varying Ni concentrations. The thermal disorder factor increases with increasing annealing temperature, indicating a more disordered lattice. Such investigation has importance where the performance of functional devices is determined by the electronic properties of nanometer sized materials. In a nutshell, the present work critically elucidates the combined impact of compositional variations and annealing temperatures on electronic structures.

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Annealing-Induced Change of Hydrogen Behavior in Zno Nanorods Revealed by Photoluminescence

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Study on the Annealing of Cd1-xZnxTe Alloys

Formation of V Zn -N O Acceptors with the Assistance of Tellurium in Nitrogen-Doped ZnO Films

Thermal Evolution of Zinc Interstitial Related Donors in High-Quality NH_3-doped ZnO Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

Annealing Temperature Dependence of the Structures and Properties of Co-implanted ZnO Films

Mutually Beneficial Doping of Tellurium and Nitrogen in ZnO Films Grown by Metal-Organic Chemical Vapor Deposition

Investigation of Annealing-Induced Oxygen Vacancies in the Co-doped ZnO System by CoK-edge XANES Spectroscopy

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

Influences of Defects Evolvement on the Properties of Sputtering Deposited Zno:Al Films Upon Hydrogen Annealing

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Optical Fingerprints of Donors and Acceptors in High-Quality Nh3-Doped Zno Films

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Evolution of structural phase transition from hexagonal wurtzite ZnO to cubic rocksalt NiO in Ni doped ZnO thin films and their electronic structures

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films