Abstract:Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits. The interaction between nitrogen (N) and interstitial oxygen (Oi) atoms in the low temperature regime (300–650 °C), which leads to N–O complexes in the form of NOx (x = 1, 2, or 3), forms a series of shallow thermal donors (denoted as N–O STDs). Such N–O STDs are detrimental to the stability of electrical resistivity of NCZ silicon. In this work, we have experimentally investigated the elimination of N–O STDs in NCZ silicon by means of conventional furnace anneal (CFA) and rapid thermal anneal at elevated temperatures ranging from 900 to 1250 °C, aiming to explore the underlying mechanism. It is found that most of the N–O STDs formed in NCZ silicon can be eliminated by a very short period of anneal at the aforementioned temperatures, providing solid evidence for the viewpoint that the elimination of N–O STDs is ascribed to the decomposition of NOx complexes. Somewhat unexpectedly, the residual N–O STDs are much more after the 1250 °C/2 h CFA than after the 900 °C/2 h or 1000 °C/2 h counterpart, which is found to be due to the fact that more nitrogen pairs [(N2)s] are remaining after the 1250 °C/2 h CFA. It is proposed that most of the (N2) atoms are involved in the growth of grown-in oxide precipitates during the 900 or 1000 °C/2 h CFA. The first-principles calculations and molecular dynamics simulation indicate that the elimination of N–O STDs is essentially ascribed to the destruction of “NO ring” that is the core of NOx complexes. Furthermore, based on the experimental and theoretical results, we have made a thorough thermodynamic analysis to account for the details of elimination of N–O STDs as revealed in this work. It is believed that our experimental and theoretical studies have gained more insight into the N–O STDs in NCZ silicon.

Thermal Evolution of Zinc Interstitial Related Donors in High-Quality NH_3-doped ZnO Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Annealing-Induced Change of Hydrogen Behavior in Zno Nanorods Revealed by Photoluminescence

Optical Fingerprints of Donors and Acceptors in High-Quality Nh3-Doped Zno Films

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

Properties of N-doped ZnO thin films in annealing process

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Influence of Annealing on the Properties of Mn and N Co-Doped Zn0.88mn0.12o : N Films

Fabrication of Zno Nanoneedle/Nanocolumn Composite Films and Annealing Induced Improvement in Their Microstructural and Photoluminescence Characteristics

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Production Of High-Quality Zno Films By The Two-Step Annealing Method

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Effect of Annealing on Conductivity Behavior of Undoped Zinc Oxide Prepared by Rf Magnetron Sputtering

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO