Abstract:Performance of the material depends directly on the electronic and energy band structure, to improve the photoactivity of TiO2 and decrease carrier recombination centers induced by monodoping, the TiO2 thin film has been modified with V and N codopants by ion implantation for tailing and controlling the electronic structure and energy band structure. Compared to monodopant, codopants of V and N exhibit a synergistic effect in the photoactivity enhancement of TiO2. X-ray photoelectron spectroscopy (XPS) studies demonstrate that the implanted V and N ions are introduced into the lattice of TiO2 through V and N substituting Ti and O, respectively. The electronic structure of V/N codoped TiO2 was calculated by First-principles calculations based on density-functional theory, the results show the band edges of TiO2 can be tailored by V and N codopants. UV-vis spectra consistently show the absorption edge of V/N codoped TiO2 film is widen to visible light region. More importantly, the photoactivity of TiO2 film has been significantly improved after V/N codoping. The enhanced photocatalytic performance is believed to be due to the V and N codopants induced synergistic effect that not only enhances the absorption of visible light but also promotes the separation of photogenerated electrons and holes in TiO2. Besides, there exists an optimum for V/N ions implantation fluence. The capability of improving TiO2 photoactivity by V/N codoping could open up new opportunities in the development of highly efficient photocatalysts and photoelectrodes for solar energy and environmental applications.

Mutually Beneficial Doping of Tellurium and Nitrogen in ZnO Films Grown by Metal-Organic Chemical Vapor Deposition

Tellurium Assisted Realization of P-Type N-doped ZnO

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Formation of V Zn -N O Acceptors with the Assistance of Tellurium in Nitrogen-Doped ZnO Films

Synthesis and Properties of Tellurium-Nitrogen Co-Doped ZnO Micro-/Nano-rods

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

Tailoring the Performance of Ni-CaO Dual Function Materials for Integrated CO2 Capture and Conversion by Doping Transition Metal Oxides

The Suppression of Zinc Interstitial Related Shallow Donors in Te-doped ZnO Microrods

Synergistic Effect of V/N Codoping by Ion Implantation on the Electronic and Optical Properties of Tio2

Synthesis and investigating effect of tellurium-doping on physical properties of zinc oxide thin films by spray pyrolysis technique

Co-doping: an Effective Strategy for Achieving Stable P-Type ZnO Thin Films

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Effects of Co Doping on the Growth and Photocatalytic Properties of ZnO Particles

Carbon Clusters in N-doped ZnO by Metal-Organic Chemical Vapor Deposition

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

Thermal Treatment Induced Change of Diluted Oxygen Doped ZnTe Films Grown by Metal-Organic Chemical Vapor Deposition

Effects of N Doping on Phase Transition and Visible-Light Photocatalytic Activity of ZnO/Zinc Titanate Core–Shell Nanorod Arrays

Compensation Mechanism in N-doped ZnO Nanowires