Abstract:Introducing resonant levels is a potent strategy to improve the thermoelectric properties of the thermoelectric systems. However, the beneficial effect of resonant levels tends to be weakened with rising temperature for the PbTe system. This motivates us to introduce dynamic doping of Cu into Cr-doped n-type PbTe to achieve the fully optimized carrier transport over a wide temperature range. As a consequence, an extraordinary figure of merit, ZT of - 0.55 at room temperature, a peak ZT of - 1.31 at 773 K and an average ZT of - 1.02 in the range of 323 to 823 K are obtained in the Pb0.975Cr0.025Te-0.2%Cu. Additionally, how co-doped of Cr and Cu contributes to suppressing thermal transports is still ambiguous. Herein, we employ comprehensive electron microscopy investigations to reveal that the synergistic incorporation of Cr and Cu into the PbTe matrix results in a series of phonon scattering sources, including massive point defects, high-density of nanoscale precipitates, microscale secondary phases, and dense grain boundaries, which can significantly reduce the lattice thermal conductivity by enhancing phonon scattering. This work clarifies the fundamental Cr-doping mechanism in PbTe and demonstrates that dynamic Cu-doping engineering is an effective approach to boosting thermoelectric performance, which should be applied in other thermoelectric materials.

Tellurium Assisted Realization of P-Type N-doped ZnO

Mutually Beneficial Doping of Tellurium and Nitrogen in ZnO Films Grown by Metal-Organic Chemical Vapor Deposition

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Synthesis and Properties of Tellurium-Nitrogen Co-Doped ZnO Micro-/Nano-rods

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

Formation of VZn-NO acceptors with the assistance of tellurium in nitrogen-doped ZnO films

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno

The Suppression of Zinc Interstitial Related Shallow Donors in Te-doped ZnO Microrods

Carbon Clusters in N-doped ZnO by Metal-Organic Chemical Vapor Deposition

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

The origin of p-type conduction in (P, N) co-doped ZnO

Breakthrough of the P-Type Doping Bottleneck in Zno by Inserting an Ultrathin Znx (X = S, Se and Te) Layer Doped with N-X or Ag-Zn

P-Type Zns:N Nanowires: Low-Temperature Solvothermal Doping and Optoelectronic Properties

Co-doping: an Effective Strategy for Achieving Stable P-Type ZnO Thin Films

Single-Crystalline Sodium-Doped P-Type ZnO and ZnMgO Nanowires Via Combination of Thin-Film and Nano Techniques

Enhanced thermoelectric properties of ZnO: C doping and band gap tuning

Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping*

Achieving High-Performance N-Type PbTe Via Synergistically Optimizing Effective Mass and Carrier Concentration and Suppressing Lattice Thermal Conductivity

Generation of Nitrogen Acceptors in ZnO Using Pulse Thermal Processing