Abstract:In this paper, the authors have investigated the thermal evolution of the forms, density, and electrical properties of the zinc interstitial (Zni) related donors in NH3-doped ZnO films via annealing the as-grown sample at different temperatures. The relatively high crystalline quality has eliminated the effect from grain boundaries and thus guaranteed the validity of the study. Generally, in the presence of nitrogen, the main forms of Zni are the Zni-NO complexes and the Zni small clusters. When increasing the annealing temperature to a moderate level (around 700 °C), the dissociation of the Zni and the NO in the Zni-NO complexes would make them partially desorb from the sample. Meanwhile, part of the isolated Zni created from the dissociation would aggregate to form the Zni small clusters (Zni-Zni). When increasing the annealing temperature to 900 °C, the desorption of the Zni-NO complex would continue, but the Zni small clusters are no longer thermally stable. They would decompose into isolated Zni atoms and finally desorb from the sample. As the Zni-NO complexes and the Zni small clusters are both shallow donors, their gradual desorption while increasing the annealing temperature results in a reduced compensation level. Furthermore, using the NH3 as the nitrogen doping source could bring in a complex shallow acceptor in the form of (NH4)Zn. Simultaneously, annealing at high temperatures (900 °C) may result in the clustering of zinc vacancies. Therefore, the current method proposed in this work could be a feasible path to enhancing the p-type doping efficiency in nitrogen-doped ZnO material.

Formation of V Zn -N O Acceptors with the Assistance of Tellurium in Nitrogen-Doped ZnO Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

Annealing in Tellurium-Nitrogen Co-Doped ZnO Films: the Roles of Intrinsic Zinc Defects

Identification and Tuning of Zinc-Site Nitrogen-Related Complexes in ZnO Material

Mutually Beneficial Doping of Tellurium and Nitrogen in ZnO Films Grown by Metal-Organic Chemical Vapor Deposition

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Tellurium Assisted Realization of P-Type N-doped ZnO

Junction Properties of Nitrogen-Doped Zno Thin Films

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

Generation of Nitrogen Acceptors in ZnO Using Pulse Thermal Processing

Thermal Evolution of Zinc Interstitial Related Donors in High-Quality NH_3-doped ZnO Films

H-Stabilized Shallow Acceptors In N-Doped Zno

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Identification of a Nitrogen-related Acceptor in ZnO Nanowires

Synthesis and Properties of Tellurium-Nitrogen Co-Doped ZnO Micro-/Nano-rods