Abstract:Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation are expected to dope ZnO successfully provided that the non-radiative defects introduced by implantation can be annealed out. In this study, ZnO substrates are implanted with nitrogen ions, and the extended defects induced by implantation are studied by transmission electron microscopy and X-ray diffraction (XRD), before and after annealing at 900^{\circ}C. Before annealing, these defects are identified to be dislocation loops lying either in basal planes in high N concentration regions, or in prismatic planes in low N concentration regions, together with linear dislocations. An uniaxial deformation of 0.4% along the c axis, caused by the predominant basal loops, is measured by XRD in the implanted layer. After annealing, prismatic loops disappear while the density of basal loops decreases and their diameter increases. Moreover, dislocation loops disappear completely from the sub-surface region. XRD measurements show a residual deformation of only 0.05% in the implanted and annealed layer. The fact that basal loops are favoured against prismatic ones at high N concentration or high temperature is attributed to a lower stacking fault energy in these conditions. The coalescence of loops and their disappearance in the sub-surface region are ascribed to point defect diffusion. Finally, the electrical and optical properties of nitrogen-implanted ZnO are correlated with the observed structural features.

Compensation Mechanism in N-doped ZnO Nanowires

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

Fabrication and Characterization of Highly Oriented N-Doped Zno Nanorods by Selective Area Epitaxy

Synthesis and Stress Relaxation of Zno/Al-Doped Zno Core-Shell Nanowires

N-Doped Zno Thin Films and Nanowires: Energetics, Impurity Distribution and Magnetism

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

First‐principles Study of the Al‐N co‐doped Zincblende ZnO

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

The origin of p-type conduction in (P, N) co-doped ZnO

Properties of N-doped ZnO thin films in annealing process

Manipulating the Quantum Interference Effect and Magnetotransport of ZnO Nanowires Through Interfacial Doping.

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Single-Crystalline Sodium-Doped P-Type ZnO and ZnMgO Nanowires Via Combination of Thin-Film and Nano Techniques

Carbon Clusters in N-doped ZnO by Metal-Organic Chemical Vapor Deposition

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications