Abstract:Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.

SPECTRAL STRUCTURES OF SHALLOW DONORS IN QUANTUM DOTS

By using the hydrogenic spectral structures of shallow donors in quantum dots

Donors Confined by Spherical Quantum Dots and Located Anywhere

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

D- Centers in Spherical Quantum Dots.

Quantum Levels and Zeeman Splitting for Two-Dimensional Hydrogenic Donor States in a Magnetic Field.

Shallow-donor impurity effects on the far infrared electron–electron optical absorption coefficient in single and core/shell spherical quantum dots with Konwent-like confinement potential

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Spectral Properties Of A Double-Quantum-Dot Structure: A Causal Green'S Function Approach

Comment on "Shallow donor states near a semiconductor-insulator-metal interface"

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Dimensionality and Potential-Shape Effects Ond0andd−

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electrong-factor Distribution in Self-Assembled Quantum Dots

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

Scattering Due to Anisotropy of Ellipsoid Quantum Dots in GaAs/InGaAs Single Quantum Well

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Electron energy spectrum of the spherical GaAs/Al$_x$Ga$_{1-x}$As quantum dot with several impurities on the surface

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Exchange between deep donors in semiconductors: a quantum defect approach