Abstract:We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on key factors that determine the fine-structure splitting in these systems. Using a pure InAs/GaAs quantum dot as a reference system, we show that the combination of spin-orbit coupling and biaxial strain effects can lead to sizeable spin-splitting effects in these systems. Then, a realistic alloyed InGaAs/GaAs quantum dot with 25\% InAs content is studied. Our analysis reveals that the impact of random alloy fluctuations on the electronic and optical properties of (111)-oriented InGaAs/GaAs quantum dots reduces strongly as the lateral size of the dot increases and approaches realistic sizes. For instance the optical matrix element shows an almost vanishing anisotropy in the (111)-growth plane. Furthermore, conduction and valence band mixing effects in the system under consideration are strongly reduced compared to standard (100)-oriented InGaAs/GaAs systems. All these factors strongly indicate a reduced fine structure splitting in site-controlled (111)-oriented InGaAs/GaAs quantum dots. Thus, we conclude that quantum dots with realistic (50-80~nm) base length represent promising candidates for polarization entangled photon generation, consistent with recent experimental data.

Scattering Due to Anisotropy of Ellipsoid Quantum Dots in GaAs/InGaAs Single Quantum Well

Electron Scattering in GaAs/InGaAs Quantum Wells Subjected to an In-Plane Magnetic Field

Electrong-factor Distribution in Self-Assembled Quantum Dots

Effects Of Charged Self-Assembled Quantum Dots On Two-Dimensional Quantum Transport

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Correlated Electron Transport Through Parallel Double-Quantum-dot

Elastic fields in quantum dots arrays: A three-dimensional finite element study

Effect of Elastic Anisotropy on the Elastic Fields and Vertical Alignment of Quantum Dots

Elastic Light Scattering by Semiconductor Quantum Dots

Exact-Diagonalization Studies of Inelastic Light Scattering in Self-Assembled Quantum Dots

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Morphological engineering of aluminum droplet etched nanoholes for symmetric GaAs quantum dot epitaxy

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

Electronic Structure of Quantum Dots in (111) Direction

Spatially Separated Excitons in Quantum-Dot Quantum Well Structures

Scattering in Monolayer Molybdenum Disulfide Quantum Dot

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study