Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

A General Perturbation Method for Inhomogeneities in Anisotropic and Piezoelectric Solids with Applications to Quantum-Dot Nanostructures

Strain Distribution in Arbitrarily Shaped Quantum Dots with Nonuniform Composition

Elastic and Electric Fields in Quantum Wire/Dot Nanostructures via the Perturbation Theory

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Elastic Fields In Quantum Dot Structures With Arbitrary Shapes And Interface Effects

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

The Strain Distribution of Low-Dimensional Semiconductor Materials

Correlated Electron Transport Through Parallel Double-Quantum-dot

Compatible Composition Profiles and Critical Sizes of Alloyed Quantum Dots

The influence of surface stress on the equilibrium shape of strained quantum dots

Rayleigh-Schrödinger perturbation theory for electron-phonon interaction in two dimensional quantum dots with asymmetric parabolic potential

Dependence of surface strain on island geometry in embedded quantum-dot systems

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots