Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Dependence of surface strain on island geometry in embedded quantum-dot systems

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

The influence of surface stress on the equilibrium shape of strained quantum dots

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array

On the energetic origin of self-limiting trenches formed around Ge/Si quantum dots

Nonlinear effects for island coarsening and stabilization during strained film heteroepitaxy

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Strains in Si Substrate Induced by Formation of Ge Islands

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Strain-Driven Instability of A Single Island and A Hexagonal Island Array on Solid Substrates

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Strain Analysis of Ge/Si(001) Islands after Initial Si Capping by Raman Spectroscopy

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Strain-engineered Surface Transport in Si(001): Complete Isolation of the Surface State Via Tensile Strain.

Strain Induced Quantum Effect in Semiconductors

Reducing strain fluctuations in quantum dot devices by gate-layer stacking