Abstract:The annealing of sub-critical Ge wetting layers (WL<3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening until for T>460 C vacancy lines and the 2xn reconstruction are observed. The metastable Ge wetting layer (WL) then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: firstly, hillocks, with a wedding cake-type structure where the step edges run parallel to the <110> direction, are formed for thin wetting layers, while {105}-faceted structures, so-called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system. Keywords: Quantum dots, Stranski-Krastanov, epitaxy, strained layers, scanning tunneling microscopy

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Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

Dependence of surface strain on island geometry in embedded quantum-dot systems

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

The influence of surface stress on the equilibrium shape of strained quantum dots

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Strains in Si Substrate Induced by Formation of Ge Islands

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

Quantitative Model of Heterogeneous Nucleation and Growth of Sige Quantum Dot Molecules

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Quantum Dot Growth on a Stripe-Pattern

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Superlattice Growth Via MBE and Green’s Function Techniques

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing