Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Calculation of Critical Size of Coherent InAs Quantum Dot on GaAs Substrate

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

The influence of surface stress on the equilibrium shape of strained quantum dots

Self-organized GaN/A1N Hexagonal Quantum-Dots: Strain Distribution and Electronic Structure

The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

Dependence of surface strain on island geometry in embedded quantum-dot systems

The Equilibrium Composition in Ge X Si 1 - X /si Self-Assembled Alloy Quantum Dot

Numerical Analysis of the Anisotropic Elastic Strain Field in Self-assembled Quantum Dot

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

Equilibrium Critical Thickness for A Wurtzite Ingan/Gan Heterostructure

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

The Calculation of Strain Distribution in Quantum Dots with Green Method

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Investigation of the Elastic Strain Fields of Hetero-Epitaxial Self-Organized Quantum Dots

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

A Finite-element Method for Calculating Strain Distribution in Quantum Dots