Abstract:The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10(11) cm(-2) into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

Calculation of Critical Size of Coherent InAs Quantum Dot on GaAs Substrate

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

The Calculation of Strain Distribution in Quantum Dots with Green Method

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

The influence of surface stress on the equilibrium shape of strained quantum dots

The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band K·p Theory

Strain accumulation in InAs/In x Ga 1− x As quantum dots

The Strain Energy Density Distribution of the Capping Layer Surface for InAs/GaAs Quantum Dot along Different Growth Directions

Strain Distributions and Electronic Structure of Three-Dimensional InAs/GaAs Quantum Rings

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Strain accumulation in InAs/InxGa1−xAs quantum dots

Self-organized GaN/A1N Hexagonal Quantum-Dots: Strain Distribution and Electronic Structure

The preferential formation site of dislocations in InAs/GaAs quantum dots

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Numerical Investigation on Threading Dislocation Bending with InAs/GaAs Quantum Dots