Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

Shuai Zhou,Yumin Liu,Donglin Wang,Zhongyuan Yu

DOI: https://doi.org/10.1016/j.spmi.2013.08.008

IF: 3.22

2013-01-01

Superlattices and Microstructures

Abstract:•We model dislocation in quantum dot with and without inclination.•We compute critical misfit for dislocation inclination.•We compute effective bending area for dislocation inclination.

What problem does this paper attempt to address?

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Yu. N. Morokov,M. P. Fedoruk

DOI: https://doi.org/10.48550/arXiv.1601.04762

2016-01-19

Abstract:An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the strain field in silicon decreases sufficiently rapidly with distance from the center of the quantum dot, so the influence of the cluster boundary is observed only for very large quantum dots.

Mesoscale and Nanoscale Physics
Numerical Investigation on Threading Dislocation Bending with InAs/GaAs Quantum Dots

Guo-Feng Wu,Jun Wang,Wei-Rong Chen,Li-Na Zhu,Yuan-Qing Yang,Jia-Chen Li,Chun-Yang Xiao,Yong-Qing Huang,Xiao-Min Ren,Hai-Ming Ji,Shuai Luo

DOI: https://doi.org/10.1088/1674-1056/abfd9f

2021-01-01

Chinese Physics B

Abstract:The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10(11) cm(-2) into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.
Inclination-governed Deformation of Dislocation-Type Grain Boundaries

Zhu Qi,Huang Qishan,Zhou Haofei,Wang Jiangwei

DOI: https://doi.org/10.1557/s43578-021-00191-9

2021-01-01

Abstract:Grain boundaries (GBs) in polycrystalline materials are frequently curved, which differ from the well-documented planar GBs in terms of structure and dynamics. However, the physical origin of curvature-controlled GB deformation remains unclear. Here, combining in situ transmission electron microscopy (TEM) nanomechanical testing and atomistic simulation, we rationalize the fundamental influences of GB inclination on the deformation of curved dislocation-type GBs in face-centered cubic metals. Non-uniform motion of curved GB is revealed and attributed to the inclination-dependent dislocation configurations, which simultaneously change the energy and mobility of GBs. An inclination-governed GB model extending from the classic dislocation theory is further established via geometric analyses, where a universal inclination threshold of 35° is deduced to precisely predict the deformation behaviors of curved GBs. These findings enhance our mechanistic understanding of GB-mediated plasticity, shedding light on the structural design of metallic materials via precise GB engineering.
Calculation of Critical Size of Coherent InAs Quantum Dot on GaAs Substrate

Shuai Zhou,Yumin Liu,Han Ye,Donglin Wang,Pengfei Lu,Zhongyuan Yu

DOI: https://doi.org/10.1016/j.physe.2012.08.016

2012-01-01

Abstract:A thermodynamic equilibrium approach is used to simulate the stress field and calculate the total strain energy of InAs/GaAs quantum dots in the framework of anisotropic elasticity, before and after the onset of dislocation. The model can directly calculate the strain energy in the incoherent system with the dislocation forms at any position. Taking the influence of dislocation positions into consideration and based on the energy balance between the coherent and dislocated states, the equilibrium critical size of InAs quantum dots is determined.
Analysis of strained nitride quantum dots as threading dislocation filters

Han Ye,Pengfei Lü,Zhongyuan Yu,Shuai Zhou,Yumin Liu

DOI: https://doi.org/10.1016/j.solidstatesciences.2011.07.012

IF: 3.752

2011-01-01

Solid State Sciences

Abstract:A finite element model is proposed to quantitatively predict the critical condition for a nitride quantum dot to bend threading dislocation to interfacial misfit dislocation. The energy balance approach adopted is based on the elastic residual strain energy and non-elastic dislocation core energy. We find that the critical misfit, beyond which the inclination of threading dislocation is energetically favorable, depends strongly on the shape, size and aspect ratio. The results provide guidelines for the design of quantum dot dislocation filter.
The preferential formation site of dislocations in InAs/GaAs quantum dots

Shuai Zhou,Yumin Liu,Donglin Wang,Xia Xin,Gui Cao,Pengfei Lü,Zhongyuan Yu

DOI: https://doi.org/10.1016/j.spmi.2011.10.004

IF: 3.22

2012-01-01

Superlattices and Microstructures

Abstract:In this paper, taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of the pure edge and 60 degrees mixed dislocation segment in different shaped InAs/GaAs quantum dots (QDs). From the result, it is clear that for the pure edge dislocations the most energy favorable position is always the base center of the quantum dots. While as to the 60 degrees mixed dislocations, the positions near to the edge of the quantum dot base are the energy favorable area and the exact position is changed with different aspect ratio of the quantum dot. (C) 2011 Published by Elsevier Ltd.
The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

Shuai Zhou,Yumin Liu,Pengfei Lu,Lihong Han,Zhongyuan Yu

DOI: https://doi.org/10.1155/2014/103640

IF: 3.791

2014-01-01

Journal of Nanomaterials

Abstract:Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.
The Calculation of Strain Distribution in Quantum Dots with Green Method

RH Guo,HY Shi,XD Sun

DOI: https://doi.org/10.7498/aps.53.3487

IF: 0.906

2004-01-01

Acta Physica Sinica

Abstract:There is considerable interest in the study of self_assembled quantum dots as on e of the new optoelectronic materials in the field of physics. It is interest ing in theory, and also applications. In this article, we consider the InAs isla nds buried in GaAs, because of large lattice mismatch (≈-0.067), which makes s t rain effect to be the main factor in the formation of quantum dots. Most methods for calculations of strain distribution are based on the numerical solution of qu antum dots structures, which need heavy calculations work. We present a detailed process to derive an analytical formula for the strain distribution in some f am iliar shapes of quantum dots with Green function method, and discuss their influ ence on the strain distribution in quantum dots by taking into account the anisotr opy of elastic properties and shape. The results showed that the strain distribu t ions in the major part of the quantum dot structure are very similar for differe nt shapes and that the characteristic value of the hydrostatic strain component depends o nly weakly on variation of the shape of quantum dots.
Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Han Ye,Pengfei Lu,Zhongyuan Yu,BoYong Jia,Hao Feng,Yumin Liu

DOI: https://doi.org/10.1016/j.physe.2010.04.030

2010-01-01

Abstract:We present a finite element method to simulate the strain field in InSb/GaSb quantum dots in the framework of anisotropic elasticity, before and after the onset of plastic relaxation. Taking the interaction between dislocation and free surface into consideration, the model directly calculates the residual strain in the dislocated system. Based on the energy balance between the two isolated states, the equilibrium critical size is determined. In the criterion, only the non-elastic dislocation core energy should be considered separately. The results are in satisfactory agreement with experimental data.
Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Guang Yang,Hao Luo,Jiajun Li,Qinqin Shao,Yazhe Wang,Ruzhong Zhu,Xi Zhang,Lihui Song,Yiqiang Zhang,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/43/12/122801

2022-01-01

Journal of Semiconductors

Abstract:Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-Si C), which are routinely used to evaluate the quality of 4H-Si C single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-Si C can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs) and basal plane dislocations(BPDs) in 4H-Si C. In n-type 4H-Si C, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-Si C are in the ranges of 27°-35°, 8°-15° and 2°-4°, respectively. In semi-insulating 4H-Si C, the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°-34° and 21°-24°, respectively. The inclination angles of dislocation-related etch pits are independent of the etching duration, which facilitates the discrimination and statistic of dislocations in 4H-Si C. More significantly, the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs. This enables to distinguish TMDs from TSDs in 4H-Si C.
Electronic and Optical Properties of Gan/Aln Quantum Dots with Adjacent Threading Dislocations

Ye Han,Lu Peng-Fei,Yu Zhong-Yuan,Yao Wen-Jie,Chen Zhi-Hui,Jia Bo-Yong,Liu Yu-Min

DOI: https://doi.org/10.1088/1674-1056/19/4/047302

2010-01-01

Chinese Physics B

Abstract:We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band k . p theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.
Finite element analysis of conical, dome and truncated InAs quantum dots with consideration of surface effects

Hui She,Biao Wang

DOI: https://doi.org/10.1088/0268-1242/24/2/025002

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:Surface effects on conical, dome and truncated InAs quantum dots (QDs) grown on GaAs (001) substrate are quantitatively analyzed with the finite element method (FEM) taking into account the surface energy. It is found that surface effects hinder island formation and arouse changes in strain fields of QDs. According to the minimum potential energy theory, the shape transition from conical island to dome island at a certain critical point is interpreted. We conclude that conical QD or truncated QD are transitional shapes at early stages while dome QD is the mature shape in this case.
Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Yumin Liu,Zihuan Xu,Zhongyuan Yu,Boyong Jia,Wenjuan Lu,Pengfei Lu,Lihong Han

DOI: https://doi.org/10.1142/s0218863509004816

2009-01-01

Journal of Nonlinear Optical Physics & Materials

Abstract:This paper presents a finite element method for calculating the strain distribution, piezoelectric effects and their influences on the electronic structure of self-organized InAs/GaAs quantum dots. The models used for strain calculations are based on the continuum elastic theory, which is capable of treating the quantum dot of arbitrary shapes. A truncated pyramid shaped quantum dot model including the wetting layer is adopted in this work. The electronic energy levels of the InAs/GaAs systems are calculated by solving the three-dimension effective mass Schrödinger equation including the influences on the modification of conduction band edge due to the strain and piezoelectricity. The calculated results indicate that both strain and piezoelectric effects should be considered, especially in treating the electronic structure and optical characteristics for device applications.
An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

HJ Chu,JX Wang

DOI: https://doi.org/10.1088/0256-307x/22/3/041

2005-01-01

Abstract:We study strain distribution inside and outside an arbitrarily-shaped quantum dot (QD) buried in an infinite isotropic medium. By defining a very simple vector, we derive a compact formula for stress fields expressed by an integral over the interface between the QD and its surrounding material. Using this method, the analytical solution for a cuboidal QD is obtained, which is different from the previous result. It is shown that our solution satisfies the traction continuity condition on the interface. Based on this solution, it is found that the strain field in the cuboidal QD in the semiconductor heterostructure is sensitive to its height. In addition, the strain distribution around a hemispherical QD is also calculated and demonstrated.
The Preferential Nucleation Sites of Self-Assembled Quantum Dots with the Influence of Interfacial Dislocation Network

Shuai Zhou,Yumin Liu,Zhongyuan Yu

DOI: https://doi.org/10.1117/12.888354

2010-01-01

Abstract:By considering a theoretical computation model, the strain field and elastic stored energy due to an interfacial misfit dislocation network near the free surface have been calculated analytically. The result predicted the preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network. Compared with Green function method, our solution is simple, direct and can solve the problem completely.
A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Jing Wang,Haijian Chu

DOI: https://doi.org/10.1063/1.2337851

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:By introducing a homogenous comparison material, a perturbation theory based on Green's function is proposed to calculate the strain distribution inside and outside an arbitrarily shaped and anisotropic quantum dot (QD) embedded in an alien infinite medium. This theory removes the limitations of the previous analytical methods which are based upon the assumption that the QD is isotropic and has the same elastic properties as the surrounding medium. The numerical results for a truncated pyramidal Ge/Si QD structure demonstrate that the anisotropy of the materials and the difference between the stiffness tensors of the QD and the matrix have a significant influence on the strain field. It is found that the first-order approximate solution obtained by the proposed method can reduce the relative difference of the strain fields induced by the isotropic approximation from 30% to 6%. Moreover, it is shown that the strain fields obtained by the proposed method with the second-order approximate solution are very accurate for the Ge/Si QD structure. (c) 2006 American Institute of Physics.
The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band K·p Theory

Changgan Shu,Yumin Liu

DOI: https://doi.org/10.12693/aphyspola.129.371

2016-01-01

Acta Physica Polonica A

Abstract:In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the traditional calculation method is based on the single band envelope approximation with the modified band edge from the eight band k center dot p theory. In this paper, we use the eight band k center dot p Hamiltonian to calculate, and the piezoelectric effects and the electronic structure are also discussed subsequently. To this end, some necessarily derived formulae in calculations about using the finite element calculation software COMSOL are presented in this paper. The results show the details about strain distributions, piezoelectric effects and electronic structure of an InAs/GaAs pyramidal quantum dot, verify the feasibility and efficiency of the calculation method.
Self-organized GaN/A1N Hexagonal Quantum-Dots: Strain Distribution and Electronic Structure

Liu Yu-Min,Yu Zhong-Yuan,Ren Xiao-Min,Xu Zi-Huan

DOI: https://doi.org/10.1088/1674-1056/17/9/055

2008-01-01

Abstract:This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AIN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AIN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.
Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Di Yang,Lai Wang,Zhi-Biao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.1016/j.spmi.2016.02.016

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:The dislocations in InGaN/GaN quantum dots grown by metal organic chemical vapor deposition were studied by high-resolution transmission electron microscopy combining the Fourier filtering process. The misfit dislocations were observed in uncapped InGaN/GaN quantum dots. However, for the capped InGaN/GaN quantum dots, the GaN capping layer was found to suppress the generation of misfit dislocations and hence hindered the strain relaxation. Therefore, an overgrowth InGaN layer was used to relieve the strain in InGaN quantum dots and misfit dislocations were correspondingly found in these samples. In addition, defects were observed in low temperature GaN layers which suggested the existence of stacking faults.
Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

XueFei Liu,ZiJiang Luo,Xun Zhou,JieMin Wei,Yi Wang,Xiang Guo,QiZhi Lang,Zhao Ding

DOI: https://doi.org/10.1140/epjb/e2019-100090-5

2019-01-01

The European Physical Journal B

Abstract:Stress and strain distributions in and around a single or two-coupled pyramidal InAs quantum dots (QDs) embedded in GaAs are calculated by finite element methods according to the continuum elasticity theory. By changing the quantum dot spacing and thickness of cap layer, the results about strain and stress distributions show compressive strain and stress distribution in the QDs and relaxation undergoes two stages with different speeds for different quantum dot height, quantum width and thickness of cap layer. The stress and strain distributions of pyramidal QDs would not vary monotonously with geometric dimensions. The height of quantum dot and cap layer thickness can effectively adjust the vertical correlation of self-assembly QDs according to the calculation. The shape of stress distribution at surface of cap layer can be tuned from a quadrangle into a circle by increasing the thickness of cap layer or decreasing the height of quantum dot. Also, a new approach to grow quantum ring is found in this paper. The calculations of two-coupled QDs show that the self-assembly technology might fail if the horizontal distance between two QDs is not large enough. The stress induced by upper QDs will be relaxed to zero with a longer distance downwards is found in this paper. Graphical abstract

Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Numerical Investigation on Threading Dislocation Bending with InAs/GaAs Quantum Dots

Inclination-governed Deformation of Dislocation-Type Grain Boundaries

Calculation of Critical Size of Coherent InAs Quantum Dot on GaAs Substrate

Analysis of strained nitride quantum dots as threading dislocation filters

The preferential formation site of dislocations in InAs/GaAs quantum dots

The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

The Calculation of Strain Distribution in Quantum Dots with Green Method

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Electronic and Optical Properties of Gan/Aln Quantum Dots with Adjacent Threading Dislocations

Finite element analysis of conical, dome and truncated InAs quantum dots with consideration of surface effects

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

The Preferential Nucleation Sites of Self-Assembled Quantum Dots with the Influence of Interfacial Dislocation Network

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band K·p Theory

Self-organized GaN/A1N Hexagonal Quantum-Dots: Strain Distribution and Electronic Structure

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method