Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Analysis of strained nitride quantum dots as threading dislocation filters

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Analysis of strain energy in nanowire heterostructures with component gradient buffer section

Compatible Composition Profiles and Critical Sizes of Alloyed Quantum Dots

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Design rules for dislocation filters

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Strain Distribution in Arbitrarily Shaped Quantum Dots with Nonuniform Composition

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Misfit Strain Relaxation Mechanisms in Core/Shell Nanowires

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote Heteroepitaxy

Measurement of Strain Fields in an Edge Dislocation

Strain Induced Quantum Effect in Semiconductors

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Lattice mismatch and twist partitioning at commensurate dichromatic pattern of two-phase interfaces

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Elastic Fields In Quantum Dot Structures With Arbitrary Shapes And Interface Effects