Abstract:Linear piezoelectric formulations were employed to analytically evaluate the electroelastic fields generated by a single threading edge/screw dislocation in piezoelectric gallium nitride (GaN) thin film. All possible growth orientations, namely c-plane (polar), a- and m-planes (non-polar), and (112¯2)-plane (semi-polar) of GaN layers were considered for the analysis. Single piezoelectric threading edge and screw dislocations were also modeled by a commercial finite element analysis code, ABAQUS 6.14. The edge dislocation was modeled by invoking one-dimensional thermal strain analogy to effectively introduce an extra plane of atoms. The screw dislocation was modeled by creating a slip in opposite surfaces by applying opposite displacements of magnitude equal to half the Burgers vector parallel to the direction of the dislocation line. We also evaluated the Peach-Kohler force acting on a piezoelectric dislocation as well as the material force calculated by the J-integral. The effects of piezoelectricity and the line charge on electroelastic fields induced by a single dislocation were investigated for various growth orientations. We also evaluated the role of spontaneous polarization along c-direction in the presence of electroelastic fields generated by the dislocation. These results can be utilized in studying the influence of piezoelectric strains and electrical fields on the optoelectronic performance of GaN-based devices in the presence of dislocations. They can also be helpful in understanding the mechanics of misfit dislocations that form between the substrate and the film.

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Application of multiphoton photoluminescence in characterization of GaN dislocations

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

A Screw Dislocation Interacting with a Piezoelectric Bimaterial Interface

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

Study on the Dislocations in GaN Films by Wet-Chemical Etching