Abstract:InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2×1010cm-2 and 6.3×1010cm-2 are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9×1018cm-3 and 1.2×1018cm-3 are obtained by room temperature Hall effect measurement. VN is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05meV and 5.58meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Thickness Dependent Dislocation, Electrical and Optical Properties in Inn Films Grown by Mocvd

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Low Density of Threading Dislocations in Aln Grown on Sapphire

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN