Abstract:The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

Electronic and Optical Properties of Gan/Aln Quantum Dots with Adjacent Threading Dislocations

Exciton states in strained GaN/AlxGa1-xN quantum dots

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

The calculation of electronic structure in GaN/AlN quantum dots with finite element method

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Influence of Dislocations in the GaN Layer on the Electrical Properties of an AlGaN/GaN Heterostructure

Structure Properties of InN Quantum Dots in GaN Semiconductor

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/Al x Ga 1−x N spherical quantum dots

Hybrid Density Functional Theory Study of Band Gap Tuning in Aln and Gan Through Equibiaxial Strains

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

A Screw Dislocation Interacting with a Piezoelectric Bimaterial Interface

Phase Separation in Gan/Algan Quantum Dots

Hybrid Density Functional Theory Studies of AlN and GaN under Uniaxial Strain.

Lattice Images of Dislocations with Edge Components in Gan Epilayers Grown on Al2o3 Substrates

Dislocation Behavior in Algan/Gan Multiple Quantum-Well Films Grown with Different Interlayers

Band Engineering Of Gan/Aln Quantum Wells By Si Dopants

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Charge induced reconstruction of glide partial dislocations and electronic properties in GaN

Electronic Structures of Inn/Gan Quantum Dots