Abstract:The configurations of core/shell nanowires (NWs) and quantum dots (QDs) decorating NWs have found great applications in forming optoelectronic devices thanks to their superior performances. The combination of the two configurations would expect to bring more benefits, however, the nanometer-scale electrostatic properties of the QD/buffer layer/NW heterostructures are still unrevealed. In this study, the InAs QDs decorating GaAs/AlAs core/shell NWs are systemically studied both experimentally and theoretically. The layered atomic structures, chemical information, and anisotropic strain conditions are characterized by comprehensive transmission electron microscopy (TEM) techniques. Quantitative electron holography analyses show a large number of electrons accumulating in the InAs QD, especially at the dot apex, and charges of reversed signs and similar densities are observed to distribute at the sequential interfaces, leaving great amounts of holes in the NW core. Theoretical calculations including simulated heterostructural band structures, interfacial charge transfer, and chemical bonding analysis are in good accordance with the experimental results, and prove the important role of the AlAs buffer layer in adjusting the heterostructural band structure as well as forming stable InAs QDs on the NW surfaces. These results could be significant for achieving related optoelectronic devices with better stability and higher efficiency.

Electronic Structures of Inn/Gan Quantum Dots

Structure Properties of InN Quantum Dots in GaN Semiconductor

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Exciton states and interband optical transitions in InGaN quantum dots

Atom probe composition and in situ electronic structure of epitaxial quantum dot ensembles

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Structural evolution and electronic properties of pure and semiconductor atom doped in clusters: Inn - , Inn Si- , and Inn Ge- (n = 3-16)

g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Theoretical study on InxGa1-xN/GaN quantum dots solar cell

Electronic Structure of Quantum Dots in (111) Direction

Study of Nanometer-Scale Structures and Electrostatic Properties of InAs Quantum Dots Decorating GaAs/AlAs Core/shell Nanowires

Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Electronic Structure and Optical Properties of Zinc-Blende GaN Quantum Dots

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects