Christopher Natale,Ethan Diak,Ray LaPierre,Ryan B. Lewis
Abstract:Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been treated as isolated objects, with the degree of hybridization between neighboring quantum dots and the wetting layer left unexplored. Here, we use atom probe tomography and transmission electron microscopy to uncover the three-dimensional composition profile of a high-density ensemble of epitaxial InAs/GaAs quantum dots. The sub-nanometer compositional data is used to construct the 3D local band structure and simulate the electronic eigenstates within the dense quantum dot ensemble using finite element method. This in situ electronic simulation reveals a high degree of hybridization between neighboring quantum dots and the wetting layer, in stark contrast to the usual picture of isolated quantum nanostructures. The simulated transition energies are compared with low temperature photoluminescence. This work has important applications for quantum dot laser design and paves the way to engineering ensemble effects in quantum dot lasers and other quantum nanostructures.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **In high - density quantum dot (QD) arrays, the influence of coupling and hybridization between quantum dots on the electronic structure and optical properties**.
Specifically, traditionally, the electronic properties of quantum dots are usually treated as isolated objects, ignoring the degree of hybridization between adjacent quantum dots and the wetting layer. However, in practical applications, especially in high - density quantum dot arrays such as quantum dot lasers, this hybridization effect may significantly affect device performance. Therefore, researchers need to deeply understand the complex interactions between these quantum dots and their specific impacts on electronic states and optical properties.
To solve this problem, the author used **Atom Probe Tomography (APT)** and **Transmission Electron Microscopy (TEM)** to reveal the three - dimensional component distribution of high - density InAs/GaAs quantum dot arrays, and simulated the electronic eigenstates of these quantum dots by the Finite Element Method (FEM). The research results show that there is a high degree of hybridization between adjacent quantum dots and the wetting layer, which is very different from the traditional isolated quantum dot model.
In addition, the paper also explored how these hybridization effects affect the design of quantum dot lasers, and proposed the possibility of designing new quantum nanostructures by regulating the hybridization between quantum dots.
### Key Formulas
1. **3D time - independent Schrödinger equation**:
\[
-\frac{\hbar^2}{2m(x,y,z)} \nabla^2 \Psi(x,y,z)+V(x,y,z) \Psi(x,y,z)=E \Psi(x,y,z)
\]
where \( m(x,y,z) \) is the effective mass and \( V(x,y,z) \) is the local potential energy.
2. **Spatial resolution calculation**:
\[
r_n(dx, dy, dz)=(2n + 1)\sqrt{dx^2+dy^2+dz^2}
\]
The average spatial resolution \( \mu \) and variance \( \sigma^2 \) are respectively:
\[
\mu=\sum_{n = 0}^{K}P_n r_n
\]
\[
\sigma^2=\sum_{n = 0}^{K}P_n [r_n-\mu]^2
\]
### Summary
By combining APT and FEM, this research revealed the complex hybridization phenomenon between quantum dots in high - density quantum dot arrays, which is of great significance for the design of quantum dot lasers and the application of other quantum nanostructures.